GaN Power Amplifiers
Up to 40 Watts
Frequency Coverage: 2.0 to 18.0 GHz
CTT’s GaN power amplifiers are configured specifically for high output power, small size and high operating temperature range. The design of this family of power amplifiers has evolved fro CTT’s long experience in MIC technology, in combination with the utilization of the latest available GaN power output devices. High power density and junction temperature of GaN devices make them the best choice for many defense electronics as well as commercial applications. They are suitable for UAV, Radar, and as replacements for TWTs in CW and Pulsed applications.
The specifications listed are average or continuous-wave (CW) power ratings, and all of these amplifiers can be used for pulsed signal applications as well, with higher output-power ratings. All CTT’s GaN amplifiers undergo a 24-hour burn-in period and thorough screening to ensure reliability. Specifications listed are guaranteed at 25°C. Units operate from -55 to +85°C.
New Products appear in BOLD type
|
|
|
Gain |
Flatness |
NF |
P1dB |
VSWR |
Vdc |
Current |
|
Request |
| MODEL NUMBER |
Freq. |
(dB) |
(±dB) |
(dB) |
(dBm) |
In/Out |
Volts |
(mA) |
Case |
For |
| |
(GHz) |
Min |
Max |
Max |
Min |
Max |
|
Typ |
|
Quote |
|
| AGM/060-4343 |
2.0-6.0 |
43 |
3.00 |
8.0 |
43 |
43.0:1 |
30 |
4200 |
SP |
RFQ |
| AGM/060-4356 |
2.0-6.0 |
56 |
3.00 |
8.0 |
43 |
56.0:1 |
30 |
4260 |
SP |
RFQ |
| AGM/060-4646 |
2.0-6.0 |
46 |
3.50 |
8.0 |
46 |
46.0:1 |
30 |
7700 |
SP |
RFQ |
|
| AGX/0218-3946 |
2.0-18.0 |
46 |
3.00 |
8.0 |
39 |
46.0:1 |
32 |
3100 |
SP |
RFQ |
|
| AGM/180-3940 |
6.0-18.0 |
40 |
3.00 |
8.0 |
39 |
40.0:1 |
32 |
3100 |
SP |
RFQ |
| AGM/180-4242 |
6.0-18.0 |
42 |
3.00 |
8.0 |
42 |
42.0:1 |
32 |
4500 |
SP |
RFQ |
| AGM/180-4550 |
6.0-18.0 |
50 |
3.00 |
8.0 |
45 |
50.0:1 |
32 |
8800 |
SP |
RFQ |
|
| AGW/105-4250 |
8.5-10.5 |
50 |
3.00 |
8.0 |
42 |
50.0:1 |
30 |
3300 |
SP |
RFQ |
| AGW/105-4550 |
8.5-10.5 |
50 |
3.00 |
8.0 |
45 |
50.0:1 |
30 |
6100 |
SP |
RFQ |
|
|
GaN Power Amplifier Comments:1. Proper heat sinking is needed to keep the CASE temperature below +70°C. Otherwise, permanent damage or degradation may occur.
2. SP = Special Enclosure. Please contact the factory for outline drawing.
Products > High Power & LNA MW Amplifiers > GaN power amplifiers
