Product Description

The High-Q^TM IPD process technology from ON Semiconductor offers a copper on high resistivity silicon platform ideal for the production of passive devices such as baluns, filters, couplers, and diplexers that are used in portable, wireless and RF applications.

IPD provides a cost effective solution for RF system in package. A foundry shuttle service is available for engineering prototypes. IPD technology supports fabrication of copper inductors, precision capacitors, and precision resistors in a world-class 200 mm wafer manufacturing facility.

Design services are offered for custom applications. A full feature design kit is available to customers for layout, simulation, and verification.

Features

• High-Q^TM copper inductor
• MIM capacitor
• TiN metal resistor
• Three metal routing layers (1 Al, 2 Cu)
• 200 mm silicon wafer diameter
• High resistivity silicon substrate
• Planar dual damascene copper process
• Superior process control
• Full feature design kit
• Design services
• Foundry shuttle service
• Smaller area than discrete solutions
• Thinner than LTCC
• Lower cost than GaAs
• Better performance than other silicon
  solutions

Process Characteristics

Si HRS Substrate	1.5 kΩ•cm
MIM Capacitance density	0.62 fF/μm²
Resistor Sheet Resistance	9 Ω/square
Inductor Sheet Resistance	3.5 mΩ/square
Base Si Oxide Thickness	5.6 μm
MIM Operating Voltage	20 V
M1 Al Metal Thickness	2 μm
MN Cu Metal Thickness	5 μm
MN2 Cu Metal Thickness	5 μm
Bond Pad	Wirebond, Flip-Chip

Device Characteristics (All Values Typical at 25°C)

Inductors

Parameter	Typical Value	Unit
Copper Thickness	5, 10	μm
Min Width	5	μm
Max Width	40	μm
Min Space	3	μm
Min Inner Diameter	50	μm
Recommended Range	1-50	nH
Peak Q	25-45

Resistors

Parameter	Typical Value	Unit
Min Width	2	μm
Min Length	9	μm

Capacitors

Poly/GateOx/N-Well	Typical Value	Unit
Min Width	15.75	μm
Max Width	450	μm
Max Area	45000	μm²
Recommended Range	1-100	pF

IPD2 Cross-Section